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22 February 2021 Gaussian random field EUV stochastic models, their generalizations and lithographically meaningful stochastic metrics
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Abstract
Photon absorption statistics combined with a simple model of resist chemistry triggered by each absorbed photon leads to a family of stochastic models with a Gaussian Random Field deprotection. Two important aspects of such models are discussed. First, the generalizations to stochastic reaction-diffusion models, accounting for the effects of depletion, and to models accounting for both exposure-resist stochastic and other process parameter variations, are presented. Second, several options for the stochastic metrics of EUVL processes, both meaningful and useful for lithographers and fast enough to be applicable to the full chip OPC and verification, are described, and some details of their implementations for the full-chip OPC verification and the results of tests are presented. The relation of one of the introduced stochastic metrics to the stochastic-caused variability of the electrical conductance of vertical interconnects (vias) is explained.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Azat Latypov, Gurdaman Khaira, Germain Fenger, Shuling Wang, Marko Chew, and Shumay Shang "Gaussian random field EUV stochastic models, their generalizations and lithographically meaningful stochastic metrics", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 1160917 (22 February 2021); https://doi.org/10.1117/12.2583792
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