Defect repairs for the extreme ultraviolet mask

Sang-Kon Kim

doi:10.1117/12.2583674

21 February 2021 Defect repairs for the extreme ultraviolet mask

Sang-Kon Kim

Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116091I (2021) https://doi.org/10.1117/12.2583674
Event: SPIE Advanced Lithography, 2021, Online Only

Conference Poster

Abstract

Extreme ultraviolet (EUV) lithography is a prospective technology for the fabrication of integrated chips with critical dimensions (CDs) under 10-nm. However, since chips with similar CDs have similar defect sizes, one of the most critical problems in extreme ultraviolet lithography (EUVL) is mask defect and repair. Defects cause local areas of undesired absorption, reflectivity, or phase change, which ultimately lead to imperfections in the printed image. For example, phase defects may cause substantial changes in image anomalies with different focuses. In this paper, repair methods such as modified absorber, modified absorber with film adding, modified absorber with multilayer peeling, and vote-taking are compared quantitatively using the scattering matrix method.

Conference Presentation

Citation Download Citation

Sang-Kon Kim "Defect repairs for the extreme ultraviolet mask", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116091I (21 February 2021); https://doi.org/10.1117/12.2583674

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