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17 March 2021 Novel processing technologies for advanced EUV patterning materials using metal oxide resist (MOR)
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Conference Poster
Abstract
Extreme ultraviolet (EUV) lithography has been begun high volume manufacturing (HVM). To allow for robust processing, both CAR and novel metal oxide resist (MOR) materials are needed, but they each come with unique challenges specific to the layer being printed. CAR resist shows good capability for CH printing and pattern transfer. However, specific processing techniques for the pattern transfer is required to mitigate LCDU issues. Additionally CAR L/S printing shows robust capability at 18nm HP, but when approaching 16nm HP, the defect process window is impacted by collapse and bridging. For ultimate resolution, novel materials such as MOR have been demonstrated but sensitivities of the materials for CD stability and defectivity need to be mitigated. TOKYO ELECTRON investigates ways to reduce these risks with a novel approach for coating process, post exposure bake, and developing sequence. This paper reports technologies to improve CDU, PW, and defectivity. In addition, we report solutions of solving metal contamination risk for MOR while maintaining productivity.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomoya Onitsuka, Shinichiro Kawakami, Arnaud Dauendorffer, Satoru Shimura, Kathleen Nafus, Yannick Feurprier, Philippe Foubert, and Danilo De Simone "Novel processing technologies for advanced EUV patterning materials using metal oxide resist (MOR)", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116091L (17 March 2021); https://doi.org/10.1117/12.2583809
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