CCD Chemical/Mechanical Thinning Results

M. P. Lesser

doi:10.1117/12.962692

22 December 1989 CCD Chemical/Mechanical Thinning Results

M. P. Lesser

Proceedings Volume 1161, New Methods in Microscopy and Low Light Imaging; (1989) https://doi.org/10.1117/12.962692
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Charge-coupled devices (CCDs) are becoming increasingly used as the primary detector for many astronomical imaging and spectroscopic instruments. The major limitations of front-illuminated CCDs in this field are their lack of blue and UV spectral response and relatively poor visible light response. Thinned, back-illuminated CCDs can achieve significantly higher quantum efficiency but typically have a warped imaging surface, non-uniform flat-field response, and often do not respond well to backside charging techniques to eliminate the backside potential well. We describe here a novel thinning/polishing technique which produces an optically fiat imaging surface independent of the epitaxial/substrate interface location. Chemical/mechanical polishing can be used to thin a CCD when the final device thickness is greater 20pm or possible a wafer to any thickness. We discuss the effect of silicon thickness and thinning technique on surface warpage. We also discuss the bump bonding mounting method which we are beginning to use to improve the yield of the thinning process, the ease of backside charging and antireflection coating, and the ability to produce mosaics of CCDs for large focal planes such as the new generation of ground-based telescopes.

Citation Download Citation

M. P. Lesser "CCD Chemical/Mechanical Thinning Results", Proc. SPIE 1161, New Methods in Microscopy and Low Light Imaging, (22 December 1989); https://doi.org/10.1117/12.962692

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