Paper
22 December 1989 GaAs/AlAs Super Lattice Photocathodes
Jon R. Howorth, John Roberts, Mike F. Robinson
Author Affiliations +
Abstract
The design of Gallium Arsenide photocathodes has remained almost static since the pioneering work of Antypas et al in 1973/74(1). This is partly because the GaAs photocathode development has been driven by military requirements, and once production has started, the design is frozen to enable products to be standardised. Recent developments in metal organic chemical vapour deposition (MOVPE) enable new cathode structures to be designed. In our case, we are concerned to produce a photocathode with high quantum efficiency over a wide spectral band, to enable us to build photomultipliers and image intensifiers for general scientific applications. This paper describes some of the cathode structures which have been grown at Sheffield University and Epi Materials Ltd. The paper gives data on morphology, photoluminescence and other material parameters. The paper also gives some of the early data on the photo sensitivity and spectral response together with an overview of some of the devices that can be made with these photocathodes.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jon R. Howorth, John Roberts, and Mike F. Robinson "GaAs/AlAs Super Lattice Photocathodes", Proc. SPIE 1161, New Methods in Microscopy and Low Light Imaging, (22 December 1989); https://doi.org/10.1117/12.962698
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KEYWORDS
Gallium arsenide

Superlattices

Luminescence

Etching

Metalorganic chemical vapor deposition

Microscopy

Night vision

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