Silicon CCD Optimized For Near Infrared (NIR) Wavelengths

Gary R. Sims; Fabiola Griffin; Michael P. Lesser

doi:10.1117/12.962688

22 December 1989 Silicon CCD Optimized For Near Infrared (NIR) Wavelengths

Gary R. Sims, Fabiola Griffin, Michael P. Lesser

Proceedings Volume 1161, New Methods in Microscopy and Low Light Imaging; (1989) https://doi.org/10.1117/12.962688
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Improvements in silicon CCD sensitivity in the NIR by using thick, high resistivity epitaxy silicon, backside illumination, and antireflection (AR) coatings are discussed. Quantum efficiencies at 900 nm of up to 42% for frontside illuminated devices and 78% backside illuminated and AR coated devices are reported.

Citation Download Citation

Gary R. Sims, Fabiola Griffin, and Michael P. Lesser "Silicon CCD Optimized For Near Infrared (NIR) Wavelengths", Proc. SPIE 1161, New Methods in Microscopy and Low Light Imaging, (22 December 1989); https://doi.org/10.1117/12.962688

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