Imec’s AttoLab is the first industrial laboratory capable of watching the ultrafast dynamics of photoresists following 13.5 nm, EUV exposure, and for emulating high-numerical-aperture (high-NA) exposure on 300-mm wafers using two-beam EUV interference. The two respective beamlines are powered by a laser-based high-harmonic generation EUV source. Its capabilities have recently been proven by imaging 20 nm pitch lines and spaces using Lloyd’s Mirror interference lithography. In parallel, time-averaged and time-resolved techniques for studying the ultrafast dynamics of photoresists after EUV exposure, coherent diffractive imaging to study resist interfaces, and more sophisticated interference lithography techniques for printing sub-22 nm pitches on full 300-mm wafers are being developed. Taking advantage of the bright and short EUV pulses now available at imec, we will be able to contribute to a smooth transition towards next generation high-NA lithography.
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