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22 February 2021 Review of scanning electron microscope-based overlay measurement
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Overlay control has been one of the most critical issues for manufacturing of leading edge semiconductor devices. Scanning electron microscope-based overlay (SEM-OL) metrology can directly measure both overlay targets and actual devices or device-like structures with high spatial resolution. SEM-OL uses small structures which allows insertion of many SEM-OL targets across a die. Precise overlay distribution can be measured using dedicated SEM-OL mark, improving measurement accuracy and repeatability. To extend SEM-OL capability, we have been developing SEM-OL techniques that can measure not only surface patterns by critical dimension SEM but also buried patterns for leading edge device processes.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osamu Inoue "Review of scanning electron microscope-based overlay measurement", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116110A (22 February 2021);


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