Translator Disclaimer
Presentation
22 February 2021 Review of scanning electron microscope-based overlay measurement
Author Affiliations +
Abstract
Overlay control has been one of the most critical issues for manufacturing of leading edge semiconductor devices. Scanning electron microscope-based overlay (SEM-OL) metrology can directly measure both overlay targets and actual devices or device-like structures with high spatial resolution. SEM-OL uses small structures which allows insertion of many SEM-OL targets across a die. Precise overlay distribution can be measured using dedicated SEM-OL mark, improving measurement accuracy and repeatability. To extend SEM-OL capability, we have been developing SEM-OL techniques that can measure not only surface patterns by critical dimension SEM but also buried patterns for leading edge device processes.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osamu Inoue "Review of scanning electron microscope-based overlay measurement", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116110A (22 February 2021); https://doi.org/10.1117/12.2585880
PROCEEDINGS
PRESENTATION


SHARE
Advertisement
Advertisement
RELATED CONTENT

Analyzing block placement errors in SADP patterning
Proceedings of SPIE (March 21 2016)
Accuracy in optical overlay metrology
Proceedings of SPIE (March 24 2016)
High-volume manufacturing device overlay process control
Proceedings of SPIE (March 28 2017)
Industry survey on nonvisual defect detection
Proceedings of SPIE (July 15 2003)

Back to Top