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22 February 2021 Electrical validation of massive E-beam defect metrology in EUV-patterned interconnects
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EUV resists, while improving steadily, generate a number of nanobridge or break defects that increases quickly as the pitch approaches 30 nm. Inline inspection methods are therefore needed to reliably detect patterning defects smaller than 20 nm. Massive e-beam metrology provides the high resolution needed to measure these defects, while remaining compatible with HVM throughput requirements. In this work, we used a direct metal (Ru) etch process, to fabricate EUV-patterned electrical structures in the 32 nm-36 nm pitch range. We demonstrate an almost one-to-one correspondence between the e-beam metrology yield of the structures, and their electrical yield. The e-beam inspection is realized with a large-field-of-view HMI eP5 e-beam system. The match between e-beam and electrical yield shows that our e-beam inspection is able to catch all electrically relevant line breaks, while excluding false flags. These results demonstrate the capability of massive e-beam inspection in predicting electrical yield.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicola Kissoon, Etienne De Poortere, David Hellin, Stefan Decoster, Gayle Murdoch, Stephane Lariviere, Elisabeth Camerotto, Sandip Halder, Philippe Leray, Malgorzata Jurczak, and Guillaume Schelcher "Electrical validation of massive E-beam defect metrology in EUV-patterned interconnects", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116110Q (22 February 2021);

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