Presentation + Paper
22 February 2021 Measurability analysis of the HAR structure in 3D memory by T-SAXS simulation
Author Affiliations +
Abstract
To control the HAR (High Aspect Ratio) processes for producing 3D memories, a non-destructive and highly accurate measurement method is required. We report simulation results of T-SAXS (Transmission Small Angle X-ray Scattering) measurability analysis to evaluate its measurement capability of profile parameters for typical HAR structures. After that, we discuss T-SAXS extensibility for profile measurements of future 3D memories, based on measurability analysis for various HAR structural models by varying their structural parameters. For the deep depth region which is important for the future 3D memory shape measurement, we confirmed that the HAR structure with its depth = 30 μm can be measured under the assumed criteria of precision < 1%.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaori Sasaki, Takaki Hashimoto, Yenting Kuo, Hiroshi Tsukada, and Hiroyuki Tanizaki "Measurability analysis of the HAR structure in 3D memory by T-SAXS simulation", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116110U (22 February 2021); https://doi.org/10.1117/12.2582070
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KEYWORDS
X-rays

3D metrology

3D modeling

Nondestructive evaluation

Process control

Scattering

X-ray imaging

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