Pattern placement and shape distortion control using contour-based metrology

Bertrand Le Gratiet; Régis Bouyssou; Julien Ducoté; Alain Ostrovsky; Stephanie Audran; Christian Gardin; Nivea G. Schuch; Charles Valade; Jordan Belissard; Matthieu Millequant; Thiago Figueiro; Patrick Schiavone

doi:10.1117/12.2584364

10 March 2021 Pattern placement and shape distortion control using contour-based metrology

Bertrand Le Gratiet, Régis Bouyssou, Julien Ducoté, Alain Ostrovsky, Stephanie Audran, Christian Gardin, Nivea G. Schuch, Charles Valade, Jordan Belissard, Matthieu Millequant, Thiago Figueiro, Patrick Schiavone

Author Affiliations +

Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 116110Z (2021) https://doi.org/10.1117/12.2584364
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

Despite of the fact that thousands of CD-SEM (critical dimension scanning electron microscope) images are acquired in a daily basis in a fab, limited metrology is performed. Usually these images will not serve other purposes after they are collected and measured, but as they are stored, post-process analysis can be applied. Initially, most of these images are used to perform CD metrology, even though many other types of metrics could be extracted from the same images, especially when using contour metrology. In this paper two use cases will be explored, where contour-based image processing is performed on typical inline metrology targets. In both cases, initial intended metric was CD but thanks to contour based image computing, complementary information can be extracted. In the first use case, CD and overlay metrics can be extracted, while in the second CD, etch slanting and asymmetry analysis is performed across the wafer. Contour-based metrology offers new capabilities to dissociate several layers (e.g. via and line) or elements (e.g. top and bottom) in the image so that interlayer and intralayer metrics, other than width dimensions, can be computed. Besides, a solution not integrated in the tool provides excellent versatility to re-process images, thus allowing the obtention of new metrics, which can be very helpful also for retro-analysis.

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Bertrand Le Gratiet, Régis Bouyssou, Julien Ducoté, Alain Ostrovsky, Stephanie Audran, Christian Gardin, Nivea G. Schuch, Charles Valade, Jordan Belissard, Matthieu Millequant, Thiago Figueiro, and Patrick Schiavone "Pattern placement and shape distortion control using contour-based metrology", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116110Z (10 March 2021); https://doi.org/10.1117/12.2584364

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