Presentation + Paper
22 February 2021 Massive metrology and inspection solution for EUV by area inspection SEM with machine learning technology
Author Affiliations +
Abstract
As the development of Extreme Ultraviolet Lithography (EUVL) is progressing toward the sub-10nm generation, the process window becomes very tight. In this situation, local Critical Dimension (CD) variability including stochastic defect directly affects the yield loss, and it is very important to inspect/measure all patterning area of interest on chip for the process verification. In this paper, by combining Area Inspection SEM (AI-SEM) with large Field Of View (FOV) and Die-to-Database-base (D2DB) technologies, we show a comprehensive solution for fast inspection and precise massive CD measurement of EUV characterized features, such as After Development Inspection (ADI) hole pattern, and aperiodic 2D Logic pattern. Also, a big data analysis consisting of multiple CD indices output by AI-SEM, a new process window by multivariable analysis is discussed. Furthermore, Machine Learning (ML) -based inspection and metrology to maximize imaging speed, is also reported.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuyoshi Kondo, Naoma Ban, Yasushi Ebizuka, Yasutaka Toyoda, Yukari Yamada, Taeko Kashiwa, Hirohito Koike, Hiroyuki Shindo, Anne-Laure Charley, Mohamed Saib, Frieda Van Roey, Peter De Bisschop, Danilo De Simone, Christophe Beral, and Gian F. Lorusso "Massive metrology and inspection solution for EUV by area inspection SEM with machine learning technology", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 1161111 (22 February 2021); https://doi.org/10.1117/12.2583691
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KEYWORDS
Inspection

Scanning electron microscopy

Extreme ultraviolet

Metrology

Logic

Machine learning

Critical dimension metrology

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