Presentation + Paper
22 February 2021 Methods to overcome limited labeled data sets in machine learning-based optical critical dimension metrology
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Abstract
With the aggressive scaling of semiconductor devices, the increasing complexity of device structure coupled with tighter metrology error budget has driven up Optical Critical Dimension (OCD) time to solution to a critical point. Machine Learning (ML), thanks to its extremely fast turnaround, has been successfully applied in OCD metrology as an alternative solution to the conventional physical modeling. However, expensive and limited reference data or labeled data set necessary for ML to learn from often leads to under- or overlearning, limiting its wide adoption. In this paper, we explore techniques that utilize process information to supplement reference data and synergizing physical modeling with ML to prevent under- or overlearning. These techniques have been demonstrated to help overcome the constraint of limited reference data with use cases in challenging OCD metrology for advanced semiconductor nodes.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Franklin J. Wong, Yudong Hao, Wenmei Ming, Petar Žuvela, Peifen Teh, Jingsheng Shi, and Jie Li "Methods to overcome limited labeled data sets in machine learning-based optical critical dimension metrology", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116111P (22 February 2021); https://doi.org/10.1117/12.2583774
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KEYWORDS
Metrology

Machine learning

Data modeling

Semiconductors

Signal processing

Data processing

Time metrology

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