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22 February 2021 EUV defect reduction activities using coater/developer and etching technique
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Conference Poster
Abstract
Extreme ultraviolet (EUV) lithography faces major challenges for smaller nodes due to the impact of stochastic and processing failures.1 One of the main challenges for pitch shrink at these nodes is the optimization of the trade-off between break type defects versus bridge type defects as the process window between these defect modes gets smaller.2 In this paper, we examine EUV defect reduction techniques for Chemically Amplified Resist (CAR) and Metal Oxide Resist (MOR) via coater/developer process development combined with optimized etching processes.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Shiozawa, Keisuke Yoshida, Noriaki Nagamine, Arnaud Dauendorffer, Satoru Shimura, Kathleen Nafus, Yannick Feurprier, Kenta Ono, Shota Yoshimura, Atsutoshi Inokuchi, Kiyoshi Maeda, Tetsuya Nishizuka, Shinya Morikita, Yoshihide Kihara, and Ken Kobayashi "EUV defect reduction activities using coater/developer and etching technique", Proc. SPIE 11612, Advances in Patterning Materials and Processes XXXVIII, 116120T (22 February 2021); https://doi.org/10.1117/12.2583772
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