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22 February 2021 Hybrid resist synthesis by ex-situ vapor-phase infiltration of metal oxides into conventional organic resists
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Abstract
We have developed an organic-inorganic hybrid resist platform featuring versatile ex-situ control of its performance by incorporating inorganic elements using vapor-phase infiltration (VPI) into standard organic resists. With poly(methyl methacrylate) (PMMA)-AlOx hybrid as a model composition we unveiled controllability of the critical exposure dose, contrast (as high as ~30), and etch resistance; estimated Si etch selectivity over ~300, demonstrating high aspect ratio ~17 with ~30 nm resolution Si fin-structures. Building upon the demonstration of PMMA-AlOx hybrid resist, we expanded our material portfolio to a high sensitivity resist and other inorganic moieties. We present preliminary results obtained from the extreme ultraviolet (EUV) lithography dose tests conducted on corresponding infiltrated hybrids and optimization of infiltration with the help of transmission electron microscopy (TEM).
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© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikhil Tiwale, Ashwanth Subramanian, Guillaume Freychet, Eliot Gann, Kim Kisslinger, Ming Lu, Aaron Stein, Jiyoung Kim, and Chang-Yong Nam "Hybrid resist synthesis by ex-situ vapor-phase infiltration of metal oxides into conventional organic resists", Proc. SPIE 11612, Advances in Patterning Materials and Processes XXXVIII, 116120A (22 February 2021); https://doi.org/10.1117/12.2583908
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