Latest ArF light source with speckle reduction technology for immersion lithography improving chip yield

Hirotaka Miyamoto; Takamitsu Komaki; Toshihiro Oga; Taku Yamazaki; Tsukasa Hori; Masato Moriya; Hiroshi Tanaka; Takuya Ishii; Akihiko Kurosu; Katsuhiko Wakana; Takeshi Ohta; Satoru Bushida; Takashi Saito; Hakaru Mizoguchi

doi:10.1117/12.2583281

22 February 2021 Latest ArF light source with speckle reduction technology for immersion lithography improving chip yield

Hirotaka Miyamoto, Takamitsu Komaki, Toshihiro Oga, Taku Yamazaki, Tsukasa Hori, Masato Moriya, Hiroshi Tanaka, Takuya Ishii, Akihiko Kurosu, Katsuhiko Wakana, Takeshi Ohta, Satoru Bushida, Takashi Saito, Hakaru Mizoguchi

Author Affiliations +

Proceedings Volume 11613, Optical Microlithography XXXIV; 116130D (2021) https://doi.org/10.1117/12.2583281
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

Chipmakers have used cross-platform of both EUV exposure and ArF immersion multi-patterning exposure depending on cost effectiveness at each layer.　 ArF immersion exposure has been required lower linewidth roughness(LWR) to reduce cross matched machine overlay(xMMO) which is the overlay between the different platforms. ArF light sources essentially produce speckle as non-uniform intensity distribution resulting from interference effects generated within a beam. It leads to increase LWR, which results in increasing xMMO. The latest ArF immersion light source, GT66A is introduced a new optical pulse stretcher(OPS) that increases pulse duration to reduce speckle by 30% to improves LWR, which reduces xMMO. This technology will improve chip yield for chipmakers in the processes mixed ArF immersion exposure and EUV exposure.

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Hirotaka Miyamoto, Takamitsu Komaki, Toshihiro Oga, Taku Yamazaki, Tsukasa Hori, Masato Moriya, Hiroshi Tanaka, Takuya Ishii, Akihiko Kurosu, Katsuhiko Wakana, Takeshi Ohta, Satoru Bushida, Takashi Saito, and Hakaru Mizoguchi "Latest ArF light source with speckle reduction technology for immersion lithography improving chip yield", Proc. SPIE 11613, Optical Microlithography XXXIV, 116130D (22 February 2021); https://doi.org/10.1117/12.2583281

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