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22 February 2021 EUV single patterning exploration for pitch 28 nm
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Abstract
EUV single patterning opportunity for pitch 28nm metal design is explored. Bright field mask combined with a negative tone develop process is used to improve pattern fidelity and overall process window. imec N3 (Foundry N2 equivalent) logic PNR (place and route) designs are used to deliver optimized pupil through source mask optimization and evaluate OPC technology. DFM (Design For Manufacturing) related topics such as dummy metal insertion and design CD retarget are addressed together with critical design rules (e.g. Tip-to-Tip), to provide balanced design and patterning performance. Relevant wafer data are shown as a proof of above optimization process.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongbo Xu, Werner Gillijns, Youssef Drissi, Ling Ee Tan, Apoorva Oak, and Ryoung-han Kim "EUV single patterning exploration for pitch 28 nm", Proc. SPIE 11614, Design-Process-Technology Co-optimization XV, 116140Q (22 February 2021); https://doi.org/10.1117/12.2584730
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