Guest effect of N-butylammonium iodide for stable α-phase formamidinium perovskite via sequential deposition method

Yafei Wang; Hao Chen; Shibin Li

doi:10.1117/12.2584506

4 December 2020 Guest effect of N-butylammonium iodide for stable α-phase formamidinium perovskite via sequential deposition method

Yafei Wang, Hao Chen, Shibin Li

Author Affiliations +

Proceedings Volume 11617, International Conference on Optoelectronic and Microelectronic Technology and Application; 116170F (2020) https://doi.org/10.1117/12.2584506
Event: International Conference on Optoelectronic and Microelectronic Technology and Application, 2020, Nanjing, China

Abstract

Formamidinium lead iodide perovskite (FAPbI₃) is widely employed in photovoltaic area because of its better stability and high potential of efficiency compared to methylammonium lead iodide (MAPbI₃). However, the α-phase FAPbI₃ that is beneficial for high performance solar cells is not stable in air. Here, N-butylammonium Iodide (BAI) was used to slice PbI₂ precursor via guest effect. Subsequently, this BAI-PbI₂ film transforms to FAPbI₃ through the reaction with FAI solution. Meanwhile, the existence of BA accelerates the formation of α-phase FAPbI₃. We find the α-phase FAPbI₃ film based on BAI-PbI₂ precursor film shows much better stability in air, the better surface morphology and crystallization than those of the control FAPbI₃ film based on normal PbI₂ precursor. The obtained stable α-phase FAPbI₃ films are potential excellent materials for stable and high performance perovskite optoelectronic derives.

Citation Download Citation

Yafei Wang, Hao Chen, and Shibin Li "Guest effect of N-butylammonium iodide for stable α-phase formamidinium perovskite via sequential deposition method", Proc. SPIE 11617, International Conference on Optoelectronic and Microelectronic Technology and Application, 116170F (4 December 2020); https://doi.org/10.1117/12.2584506

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