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4 December 2020 Study on β-Ga2O3(010) surface characteristics: a first-principle study
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Proceedings Volume 11617, International Conference on Optoelectronic and Microelectronic Technology and Application; 116170R (2020) https://doi.org/10.1117/12.2584790
Event: International Conference on Optoelectronic and Microelectronic Technology and Application, 2020, Nanjing, China
Abstract
In order to verify the performance about the surface of β-Ga2O3 as potocathode, we calculate some related properties, such as surface energy, band structure, density of states and absorption coefficient. The result is that the surface energy of β-Ga2O3 (0 1 0) is larger than β-Ga2O3 (1 0 0) surface, which is beneficial to the adsorption of cesium. The UV absorption efficiency of the β-Ga2O3 (0 1 0) surface meets the requirements of the photocathode This work can be used as a theoretical reference for UV-photocathodes.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
He Zhao, Xiaoqian Fu, and Shanshan Ren "Study on β-Ga2O3(010) surface characteristics: a first-principle study", Proc. SPIE 11617, International Conference on Optoelectronic and Microelectronic Technology and Application, 116170R (4 December 2020); https://doi.org/10.1117/12.2584790
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