Surface Analysis For The Characterization Of Defects In Thin Film Processes

Ramin Lalezari; Robert G. Knollenberg

doi:10.1117/12.962826

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20 December 1989 Surface Analysis For The Characterization Of Defects In Thin Film Processes

Ramin Lalezari, Robert G. Knollenberg

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Proceedings Volume 1164, Surface Characterization and Testing II; (1989) https://doi.org/10.1117/12.962826
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

A surface analysis system commonly used in semiconductor processing is used to characterize microcontamination generated by optical thin film deposition processes. The system is first described and an overview presented of its operation and application when analyzing bare silicon wafers. Bare silicon wafers were used as witness plates to sample microcontamination generated by operations in ion beam sputtering and electron beam evaporation thin film processes. Additional wafers were used to test cleaning methods. The use of the surface analysis system was found to be invaluable in rapidly reducing point defects generated during processes, assessing the cleanliness of work environments, and providing feedback for developing cleaning processes.

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Ramin Lalezari and Robert G. Knollenberg "Surface Analysis For The Characterization Of Defects In Thin Film Processes", Proc. SPIE 1164, Surface Characterization and Testing II, (20 December 1989); https://doi.org/10.1117/12.962826

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