AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime

M. Sakowicz; P. Sai; D. B. But; G. Cywinski; M. Dub; I. Kašalynas; P. Prystawko; S. Rumyantsev; W. Knap

doi:10.1117/12.2576870

5 March 2021 AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime

M. Sakowicz, P. Sai, D. B. But, G. Cywinski, M. Dub, I. Kašalynas, P. Prystawko, S. Rumyantsev, W. Knap

Proceedings Volume 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV; 116850C (2021) https://doi.org/10.1117/12.2576870
Event: SPIE OPTO, 2021, Online Only

Abstract

We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors with two lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor channel. This kind FinFET modification (EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. We present experimental data of sub THz detection by EdgeFETs. We describe also how it is beneficial for observation of resonant plasma wave THz detection and emission.

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Citation Download Citation

M. Sakowicz, P. Sai, D. B. But, G. Cywinski, M. Dub, I. Kašalynas, P. Prystawko, S. Rumyantsev, and W. Knap "AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime", Proc. SPIE 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV, 116850C (5 March 2021); https://doi.org/10.1117/12.2576870

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