DUV LEDs based on AlGaN quantum dots

Julien Brault; Mohamed Al Khalfioui; Mathieu Leroux; Samuel Matta; Thi-Huong Ngo; Aly Zaiter; Aimeric Courville; Benjamin Damilano; Sébastien Chenot; Jean-Yves Duboz; Jean Massies; P. Valvin; Bernard Gil

doi:10.1117/12.2576135

5 March 2021 DUV LEDs based on AlGaN quantum dots

Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil

Author Affiliations +

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116860T (2021) https://doi.org/10.1117/12.2576135
Event: SPIE OPTO, 2021, Online Only

Abstract

Deep ultra-violet (DUV) light emitting diodes (LED) are expected to be the next generation of UV sources, offering significant advantages such as compactness, low consumption and long lifetimes. Yet, improvements of their performances are still required and the potential of Al_yGa_1-yN quantum dots as DUV emitters is investigated in this study. Using a stress induced growth mode transition, quantum dots (QD) are spontaneously formed on Al_0.7Ga_0.3N/AlN heterostructures grown on sapphire substrates by molecular beam epitaxy. By increasing the QD Al composition, a large shift of the QD photoluminescence in the UV range is observed, going from an emission in the near UV for GaN QD down to the UVC region for Al_0.4Ga_0.6N QD. A similar behavior is observed for electroluminescence (EL) measurements performed on LED structures and an emission ranging from the UVA (320-340 nm) down to the UVC (265-280 nm) has been obtained. The main performances of Al_0.7Ga_0.3N based QD LED are presented in terms of electrical and optical characteristics. In particular, the emission dependence on the input current density, including the emitted wavelength, the optical power and the external quantum efficiency are shown and discussed.

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Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, and Bernard Gil "DUV LEDs based on AlGaN quantum dots", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860T (5 March 2021); https://doi.org/10.1117/12.2576135

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