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5 March 2021 Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN
Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Adama Mballo, Gilles Patriarche, Ashutosh Srivastava, Ali Ahaitouf, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861G (2021) https://doi.org/10.1117/12.2584985
Event: SPIE OPTO, 2021, Online Only
Abstract
Combined photonic and electronic systems require diverse devices to be co-integrated on a common platform. This heterogeneous integration is made possible through several separation and transfer methods where the functioning epilayers are essentially released from their growth substrate. The use of 2D layered h-BN as a mechanical release layer has been demonstrated to be a promising technique for the hybrid integration of III-nitride devices. In this talk we will give an overview of our results on wafer-scale van der Waals epitaxy by MOVPE of different III-N heterostructure devices such as LEDs, HEMTs, solar cells, sensors and photodetectors. Furthermore, mechanical release and transfer techniques of crack-free III-N devices on foreign substrates will be presented along with a comparison between the device performances before and after transfer.
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Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Adama Mballo, Gilles Patriarche, Ashutosh Srivastava, Ali Ahaitouf, Simon Gautier, Tarik Moudakir, Paul L. Voss, and Jean Paul Salvestrini "Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861G (5 March 2021); https://doi.org/10.1117/12.2584985
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KEYWORDS
Epitaxy
Optoelectronic devices
Field effect transistors
Heterojunctions
Light emitting diodes
Photodetectors
Sensors
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