Analysis of LO phonon properties in III-nitrides: interaction with carriers and  microscopic analysis

Y. Ishitani; K. Oki; M. Chizaki; S. Okamoto; T. Nakayama; B. Lin; B. Ma; K. Morita; H. Miyake; D. Iida; K. Ohkawa

doi:10.1117/12.2576776

5 March 2021 Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis

Y. Ishitani, K. Oki, M. Chizaki, S. Okamoto, T. Nakayama, B. Lin, B. Ma, K. Morita, H. Miyake, D. Iida, K. Ohkawa

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861Y (2021) https://doi.org/10.1117/12.2576776
Event: SPIE OPTO, 2021, Online Only

Abstract

Longitudinal optical (LO) phonon has strong electric interaction with particles and fields. Particularly, the interaction in III-nitrides is more significant than that in conventional III-V materials. We show phonon-exciton interaction properties in experimental PL spectrum analysis and theoretical calculation of population transfers of excitonic levels. Thermally nonequilibrium occupations of LO phonons and other modes generated by the LO-phonon decomposition are thought to shift the population distribution in principal quantum number states and kinetic energy to the higher energy side. The radiative exciton recombination lifetime is determined by the population distribution in the excitonic states, which is determined by the balance of the electronic and phononic elementary processes. The interaction of excitons and phonons releases the excess energy to the thermal bath of the lattice system, which sometimes yields negligible lattice temperature increase in the excited region or the nonequilibrium state between electron and phonon systems. A Raman scattering imaging measure is introduced to exhibit spatial transport of phonons generated by the energy relaxation and nonradiative recombination of the excited electrons and holes, where pump-probe measurements are enabled by the simultaneous irradiation of two laser beams. It is found that the phonon transport is blocked by the misfit dislocations located on a Ga_0.84In_0.16N/GaN heterointerface.

Conference Presentation

Citation Download Citation

Y. Ishitani, K. Oki, M. Chizaki, S. Okamoto, T. Nakayama, B. Lin, B. Ma, K. Morita, H. Miyake, D. Iida, and K. Ohkawa "Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861Y (5 March 2021); https://doi.org/10.1117/12.2576776

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available