Presentation
6 March 2021 Band alignment of ScxAl1-xN/GaN heterojunctions
Eric N. Jin, Matthew T. Hardy, Alyssa L. Mock, John L. Lyons, Alan R. Kramer, Marko J. Tadjer, Neeraj Nepal, D. Scott Katzer, David J. Meyer
Author Affiliations +
Abstract
We determine the band alignment of ScxAl1-xN/GaN heterojunctions at ScN alloy fractions ranging from x = 0.04 to 0.20 using x-ray photoemission spectroscopy, and determine the band gap from spectroscopic ellipsometry. We find a transition from straddling to staggered gap as ScN alloy fraction increases, and show that the experimental results are consistent with first-principles calculations. This crossover from type-I to type-II band alignment shows a degree of freedom for engineering improved heterostructures in ScAlN/GaN-based electronic and optoelectronic devices.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric N. Jin, Matthew T. Hardy, Alyssa L. Mock, John L. Lyons, Alan R. Kramer, Marko J. Tadjer, Neeraj Nepal, D. Scott Katzer, and David J. Meyer "Band alignment of ScxAl1-xN/GaN heterojunctions", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168622 (6 March 2021); https://doi.org/10.1117/12.2579042
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KEYWORDS
Heterojunctions

Gallium nitride

Ellipsometry

Molecular beam epitaxy

Photoemission spectroscopy

X-rays

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