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We determine the band alignment of ScxAl1-xN/GaN heterojunctions at ScN alloy fractions ranging from x = 0.04 to 0.20 using x-ray photoemission spectroscopy, and determine the band gap from spectroscopic ellipsometry. We find a transition from straddling to staggered gap as ScN alloy fraction increases, and show that the experimental results are consistent with first-principles calculations. This crossover from type-I to type-II band alignment shows a degree of freedom for engineering improved heterostructures in ScAlN/GaN-based electronic and optoelectronic devices.
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Eric N. Jin, Matthew T. Hardy, Alyssa L. Mock, John L. Lyons, Alan R. Kramer, Marko J. Tadjer, Neeraj Nepal, D. Scott Katzer, David J. Meyer, "Band alignment of ScxAl1-xN/GaN heterojunctions," Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168622 (6 March 2021); https://doi.org/10.1117/12.2579042