Crystal growth on (110) β-Ga2O3 via plasma-assisted molecular beam epitaxy

Takeki Itoh; Akhil Mauze; Yuewei Zhang; James S. Speck

doi:10.1117/12.2591469

5 March 2021 Crystal growth on (110) β-Ga₂O₃ via plasma-assisted molecular beam epitaxy

Takeki Itoh, Akhil Mauze, Yuewei Zhang, James S. Speck

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870U (2021) https://doi.org/10.1117/12.2591469
Event: SPIE OPTO, 2021, Online Only

Abstract

Epitaxial growth of β-Ga2O3 was performed on (110) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Investigation of (010) substrates has revealed that (110) facets are revealed the chevron consistent features in reflection high-energy electron diffraction (RHEED) studies, which indicates (110) is a natural plane in β-Ga2O3 and exhibits atomically flat surface after Ga polishing. The growth rate dependence on Ga flux study suggests that the growth rate is not reduced on the (110) plane compared to that of (010). Atomic force microscopy (AFM) shows smooth surface morphology was obtained by growing on (110) substrates.

Conference Presentation

Citation Download Citation

Takeki Itoh, Akhil Mauze, Yuewei Zhang, and James S. Speck "Crystal growth on (110) β-Ga₂O₃ via plasma-assisted molecular beam epitaxy", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870U (5 March 2021); https://doi.org/10.1117/12.2591469

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