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5 March 2021 Deep-UV phototransistors made of ZnGa2O4 epilayers
Ray-Hua Horng
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Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116871N (2021) https://doi.org/10.1117/12.2584957
Event: SPIE OPTO, 2021, Online Only
Abstract
Single-crystalline ZnGa2O¬4 epilayers were successfully grown on sapphire substrates and fabricated into phototransistor. The operational modes of phototransistors were dependent of the thickness of epilayers. It was found that the enhancement mode n-channel transistor can be applied for DUV phototransistor as the thickness of ZnGa2O¬4 was less than 50 nm. The thermal treatment can improve the epilayer quality. The annealed ZnGa2O4-based phototransistor demonstrates a responsivity of 4.74×102 A/W at 240 nm, a DUV to visible light rejection ratio (240 nm to 470 nm) of 1.54×102, trise = 0.4 sec and tfall = 0.7 sec for response time.
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Ray-Hua Horng "Deep-UV phototransistors made of ZnGa2O4 epilayers", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116871N (5 March 2021); https://doi.org/10.1117/12.2584957
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KEYWORDS
Deep ultraviolet
Phototransistors
Visible radiation
Sapphire
Thin film growth
Thin films
Transistors
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