Poster + Presentation + Paper
5 March 2021 Mid-infrared wavelength conversion using a composite Si3N4-HfO2 waveguide device
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Conference Poster
Abstract
We report the design and numerical analysis of a composite HfO2-coated-Si3N4 waveguide pumped with femtosecond laser pulses at 1550 nm for mid-infrared wavelength generation at 4.0 µm. The principle of wavelength conversion is based on the degenerate four-wave-mixing in designed HfO2-coated-Si3N4 waveguide. The waveguide design and the dispersion engineering to get the desired phase matching conditions have been discussed. The advantages of composite Si3N4-HfO2 waveguide over Si3N4 strip waveguide include high damage threshold, better electromagnetic interaction and thus strong light confinement, and relatively longer wavelength conversion in the mid-infrared region. Such on-chip composite Si3N4-HfO2 waveguide generating mid-infrared light at 4.0 µm holds considerable potential for the applications in a wide range of the mid-infrared nonlinear optical devices.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Than Singh Saini, Shilpi Arora, and V. R. Supradeepa "Mid-infrared wavelength conversion using a composite Si3N4-HfO2 waveguide device", Proc. SPIE 11689, Integrated Optics: Devices, Materials, and Technologies XXV, 116891T (5 March 2021); https://doi.org/10.1117/12.2582755
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