David G. Hayes,1 Tomas Peach,1 Jack Baker,1 Sara-Jayne Gillgrasshttps://orcid.org/0000-0003-2611-9168,1 Craig P. Allford,1 Angela Sobiesierski,1 Connie Eng,1 Saleem Shabbir,1 Stuart Thomas,1 Curtis Hentschel,1 Clive Meaton,1 Samuel Shutts,1 Aidan Daly,2 Tracy Sweet,2 Iwan Davies,2 Peter M. Smowton1,3
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High-volume low-cost production of vertical cavity surface emitting lasers (VCSELs) will allow their exploitation in new commodity markets. We report the successful scaling up from research level fabrication to produce oxide confined VCSELs across a whole 150mm wafer. On-wafer light-current-voltage (L-I-V) and spectral measurements are analyzed to determine the cross-wafer variations in threshold current, threshold current densities and emission wavelength, which is compared with reflectivity measurements taken immediately after growth. We examine the dependence of VCSEL performance on fabrication parameters over a range of device dimensions to assess whether variation arises from non-uniformity of the epitaxial material or wafer processing.
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David G. Hayes, Tomas Peach, Jack Baker, Sara-Jayne Gillgrass, Craig P. Allford, Angela Sobiesierski, Connie Eng, Saleem Shabbir, Stuart Thomas, Curtis Hentschel, Clive Meaton, Samuel Shutts, Aidan Daly, Tracy Sweet, Iwan Davies, Peter M. Smowton, "150mm full wafer fabrication and characterization of 940nm emitting VCSELs for high-volume manufacture," Proc. SPIE 11704, Vertical-Cavity Surface-Emitting Lasers XXV, 1170406 (5 March 2021); https://doi.org/10.1117/12.2578592