On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities

Jens W. Tomm; Jan Ruschel; Johannes Glaab; Felix Mahler; Tim Kolbe; Sven Einfeldt

doi:10.1117/12.2578049

5 March 2021 On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities

Jens W. Tomm, Jan Ruschel, Johannes Glaab, Felix Mahler, Tim Kolbe, Sven Einfeldt

Proceedings Volume 11705, Novel In-Plane Semiconductor Lasers XX; 117050E (2021) https://doi.org/10.1117/12.2578049
Event: SPIE OPTO, 2021, Online Only

Abstract

We analyze changes in carrier recombination in the quantum well (QW) active region of UVB light emitting diodes. For this purpose, we established an experimental approach for in-situ characterization of aging processes by direct comparison of QW luminescence generated by two different pump mechanisms, continuous current injection and shortpulse optical excitation. This allows the quantification of changes in recombination kinetics during device operation. We observe a reduction of the luminescence decay time from ~250 to ~200 ps within the first 42 hours of high current density stress. Moreover, trap-like defect centers are generated or activated, which capture non-equilibrium carriers ultrafast and reduce the luminescence power.

Conference Presentation

Citation Download Citation

Jens W. Tomm, Jan Ruschel, Johannes Glaab, Felix Mahler, Tim Kolbe, and Sven Einfeldt "On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117050E (5 March 2021); https://doi.org/10.1117/12.2578049

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