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5 March 2021 On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities
Jens W. Tomm, Jan Ruschel, Johannes Glaab, Felix Mahler, Tim Kolbe, Sven Einfeldt
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Abstract
We analyze changes in carrier recombination in the quantum well (QW) active region of UVB light emitting diodes. For this purpose, we established an experimental approach for in-situ characterization of aging processes by direct comparison of QW luminescence generated by two different pump mechanisms, continuous current injection and shortpulse optical excitation. This allows the quantification of changes in recombination kinetics during device operation. We observe a reduction of the luminescence decay time from ~250 to ~200 ps within the first 42 hours of high current density stress. Moreover, trap-like defect centers are generated or activated, which capture non-equilibrium carriers ultrafast and reduce the luminescence power.
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© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens W. Tomm, Jan Ruschel, Johannes Glaab, Felix Mahler, Tim Kolbe, and Sven Einfeldt "On the carrier kinetics in Al(In)GaN quantum wells stressed by high current densities", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117050E (5 March 2021); https://doi.org/10.1117/12.2578049
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