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5 March 2021 High-data-rate photothermal effect graphene detector integrated in a SOI waveguide
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Abstract
Graphene has been proposed to be integrated with Si Photonics because of its very high mobility, fast carrier dynamics and ultra-broadband optical properties. High speed graphene photodetectors have been demonstrated so far, however the most are based on the photo-bolometric or photo-conductive effect. These devices are characterized by large dark current, in the order of milli-Amperes. Photothermal effect (PTE) photodetectors can be used in voltage detection mode with no dark current, it is ultra fast and it operates near zero-bias. Graphene PTE-based photodetectors have been reported so far but high-speed optical telecommunication signal detection has not been shown yet. Here, we report on a graphene PTE-based photodetector on SOI waveguide. Thanks to the optimized design we show a direct detection of 105Gb/s non-return to zero (NRZ) and 120Gb/s 4-level pulse amplitude modulation (PAM) optical signals.
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© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marco Romagnoli, Simone Marconi, Marco A. Giambra, Alberto Montanaro, Vaidotas Mišeikis, Stefano Soresi, Stefano Tirelli, Paola Galli, Fred Buchali, Wolfgang Templ, Camilla Coletti, and Vito Sorianello "High-data-rate photothermal effect graphene detector integrated in a SOI waveguide", Proc. SPIE 11711, Broadband Access Communication Technologies XV, 1171106 (5 March 2021); https://doi.org/10.1117/12.2584531
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