High temperature AlGaInAs-based 25g DML-DFB lasers operating in O-band for data center use

Antti Saarela; Petri Melanen; Ville Vilokkinen; Luukas Kuusela; Petteri Uusimaa; Pekko Sipilä; Riina Ulkuniemi; Ossi Mäkinen

doi:10.1117/12.2578257

5 March 2021 High temperature AlGaInAs-based 25g DML-DFB lasers operating in O-band for data center use

Antti Saarela, Petri Melanen, Ville Vilokkinen, Luukas Kuusela, Petteri Uusimaa, Pekko Sipilä, Riina Ulkuniemi, Ossi Mäkinen

Author Affiliations +

Proceedings Volume 11712, Metro and Data Center Optical Networks and Short-Reach Links IV; 117120B (2021) https://doi.org/10.1117/12.2578257
Event: SPIE OPTO, 2021, Online Only

Abstract

Hyperscale datacenters are driving the growth of datacom laser diode market. Small wavelength drift over temperature, small footprint and low power consumption makes directly modulated distributed feedback (DFB) lasers ideal for uncooled operation in intra-datacenter interconnects. DFB lasers require significantly less process steps than electroabsorption modulated lasers (EMLs), used typically for higher speeds and longer distances. AlGaInAs-based lasers are exceptionally desirable for uncooled operation compared to InGaAsP because of the material’s better electron confinement, resulting in better power conversion in high temperature operation, higher possible operation frequency and more stable operation in AlGaInAs based lasers. Directly modulated DFB lasers must be operated with relatively high bias current to achieve the desired bandwidth. This together with the absence of active cooling raises a reliability concern. Modulight has already demonstrated a very stable 10 Gb/s device operating in O-band with predicted median lifetime of 180 years at 85°C². Using similar epitaxial design, 25 Gb/s operation is already possible. DFBs can be further optimized by limiting the device resistance and capacitance by optimizing the doping profile as well as the contact pad. Miniaturization of the laser chip is limited by the dicing process, but the effective device size can be reduced by limiting the active area in the chip.

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Antti Saarela, Petri Melanen, Ville Vilokkinen, Luukas Kuusela, Petteri Uusimaa, Pekko Sipilä, Riina Ulkuniemi, and Ossi Mäkinen "High temperature AlGaInAs-based 25g DML-DFB lasers operating in O-band for data center use", Proc. SPIE 11712, Metro and Data Center Optical Networks and Short-Reach Links IV, 117120B (5 March 2021); https://doi.org/10.1117/12.2578257

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