1.3 µm Tilted-Cavity Semiconductor Optical Amplifier

Joanne S. LaCourse; William Rideout; Paul Gasloli; Edmund Meland

doi:10.1117/12.963364

5 January 1990 1.3 µm Tilted-Cavity Semiconductor Optical Amplifier

Joanne S. LaCourse, William Rideout, Paul Gasloli, Edmund Meland

Proceedings Volume 1177, Integrated Optics and Optoelectronics; (1990) https://doi.org/10.1117/12.963364
Event: OE/FIBERS '89, 1989, Boston, United States

Abstract

This paper reports a practical technique for making a high-performance semiconductor optical amplifier by combining tilted-cavity and a simple anti-reflective facet coating. Gains of up to 29 dB are reported at a gain ripple of 3 dB.

Citation Download Citation

Joanne S. LaCourse, William Rideout, Paul Gasloli, and Edmund Meland "1.3 µm Tilted-Cavity Semiconductor Optical Amplifier", Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); https://doi.org/10.1117/12.963364

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