InGaAsP/InP Heterojunction Interface Lattice Mismatch Effect On LPE Crystal Quality

Liu Yi-Chun; Xing Xu; Zhang Yue--Qing

doi:10.1117/12.963327

5 January 1990 InGaAsP/InP Heterojunction Interface Lattice Mismatch Effect On LPE Crystal Quality

Liu Yi-Chun, Xing Xu, Zhang Yue--Qing

Proceedings Volume 1177, Integrated Optics and Optoelectronics; (1990) https://doi.org/10.1117/12.963327
Event: OE/FIBERS '89, 1989, Boston, United States

Abstract

Using the methods of x-ray double crystal diffraction (DCD) and x-ray DCD topograph as well as photolumincence (n), InGaAsP/InP single heterojunction interface ( SHI) lattice mismatch Influcence on LPE crystal quality is studied. The experimental results indicate that this kind lattice mismatch will lead to impurity condensing, dislocations and defects as well as nonradiation recombination centers increasing in LPE InGaAsP epitax layer and induce composition gradient in the direction of crystal growth.

Citation Download Citation

Liu Yi-Chun, Xing Xu, and Zhang Yue--Qing "InGaAsP/InP Heterojunction Interface Lattice Mismatch Effect On LPE Crystal Quality", Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); https://doi.org/10.1117/12.963327

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