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5 January 1990 Optical Waveguides In GaAlAs/GaAs And GalnAs/InP Multiquantum Well Structures
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Abstract
This paper reviews the process of implantation induced multiquantum-well (MQW) mixing in GaAlAs/GaAs and GalnAs/InP MQW structures. The effects of varying the implanted ion dose and the annealing temperature and time on the properties of the mixed material are described. The application of the process to the fabrication of disorder delineated stripe optical waveguides in GaAlAs/GaAs MQW structures using silicon implantation is also discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B L Weiss, A C Wismayer, N J Whitehead, and W P Gillin "Optical Waveguides In GaAlAs/GaAs And GalnAs/InP Multiquantum Well Structures", Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); https://doi.org/10.1117/12.963359
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