5 January 1990 Optical Waveguiding In An Epitaxial Layer Of Silicon-Germanium Grown On Silicon
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Abstract
Low-loss waveguiding at X = 1.3 µm has been observed in a partially strained, 10-µm thick, single-crystal layer of Ge0,1Si0.9 grown by chemical vapor deposition on a high-resistivity (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was less than 1.9 dB/cm. Device applications of GeSi waveguides are discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Soref, Fereydoon Namavar, Joseph P. Lorenzo, "Optical Waveguiding In An Epitaxial Layer Of Silicon-Germanium Grown On Silicon", Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); doi: 10.1117/12.963332; https://doi.org/10.1117/12.963332
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