PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We present a novel backside-illuminated single photon avalanche diode (SPAD) which is compatible with standard CMOS technology. The structure of SPAD is based on p-i-n junction which is the first time to be used to backsideilluminated structure, thus enabling a significantly low dark count rate (DCR). In order to get better photon detection efficiency (PDE) in near-infrared , we optimized the junction width and thickness of the device. The structure of SPAD is designed by the TCAD Devedit tool, and some important characteristic parameters are extracted by the Atlas tool. We calculate DCR and PDE using the extracted parameters. At 5 V excess bias voltage, the DCR of 0.81 Hz/μm2 is achieved at room temperature. The PDE at 5 V excess bias voltage is 20%. The fill factor is up to 53%. The DCR of the structure has reached the international advanced level.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.