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28 February 2021 Backside-illuminated single photon avalanche diode with low dark count rate
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Proceedings Volume 11781, 4th Optics Young Scientist Summit (OYSS 2020); 117811C (2021) https://doi.org/10.1117/12.2591301
Event: Optics Frontier: Optics Young Scientist Summit, 2020, Ningbo, China
Abstract
We present a novel backside-illuminated single photon avalanche diode (SPAD) which is compatible with standard CMOS technology. The structure of SPAD is based on p-i-n junction which is the first time to be used to backsideilluminated structure, thus enabling a significantly low dark count rate (DCR). In order to get better photon detection efficiency (PDE) in near-infrared , we optimized the junction width and thickness of the device. The structure of SPAD is designed by the TCAD Devedit tool, and some important characteristic parameters are extracted by the Atlas tool. We calculate DCR and PDE using the extracted parameters. At 5 V excess bias voltage, the DCR of 0.81 Hz/μm2 is achieved at room temperature. The PDE at 5 V excess bias voltage is 20%. The fill factor is up to 53%. The DCR of the structure has reached the international advanced level.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tong Chu, Tianqi Zhao, Guilan Feng, Chunlan Lin, Jinlv Pan, Kaiyue Guo, and Rui Xu "Backside-illuminated single photon avalanche diode with low dark count rate", Proc. SPIE 11781, 4th Optics Young Scientist Summit (OYSS 2020), 117811C (28 February 2021); https://doi.org/10.1117/12.2591301
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