Presentation
20 June 2021 Optical constants for EUV scatterometry
Richard Ciesielski, Qais Saadeeh, Philipp Naujok, Karl Opsomer, Jean-Philippe Soulié, Meiyi Wu, Vicky Philipsen, Robbert W.. E. van de Kruijs, Michael Kolbe, Frank Scholze, Victor Soltwisch
Author Affiliations +
Abstract
Development of efficient absorber masks and highly reflective mirrors in the EUV spectral range is a key challenge for upcoming lithography techniques in semiconductor technology. There is an improved need to precisely know the optical constants of the materials at hand for specialized applications such as phase shifting absorber masks. A further field of application is the interpretation and accompanied modeling of scattering data of complex nanostructures. At PTB, we measured the spectral reflectance of thin film samples in the angular range from normal incidence to grazing incidence in the range of 10nm to 20nm using PTB’s lubrication-free Ellipso-Scatterometer at the soft x-ray beamline at the electron storage ring BESSY II. This allowed us to determine the optical constants of a variety of metals, semimetals and their alloys from model fits based on Fresnel’s equations for layered material stacks.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Ciesielski, Qais Saadeeh, Philipp Naujok, Karl Opsomer, Jean-Philippe Soulié, Meiyi Wu, Vicky Philipsen, Robbert W.. E. van de Kruijs, Michael Kolbe, Frank Scholze, and Victor Soltwisch "Optical constants for EUV scatterometry", Proc. SPIE 11783, Modeling Aspects in Optical Metrology VIII, 117830M (20 June 2021); https://doi.org/10.1117/12.2592543
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KEYWORDS
Data modeling

Photomasks

Reflectivity

Nanostructures

Phase shifting

Scattering

Semiconductors

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