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1 August 2021 Hot carrier devices using novel alloys and substrates
Jeremy N. Munday
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Proceedings Volume 11797, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX; 117970G (2021) https://doi.org/10.1117/12.2594386
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
High conductivity metals have long been the material of choice for traditional electronics, and over the past two decades low-loss metals have led to many novel optical devices and structures as a result of plasmonic confinement. As these fields merge, metal optoelectronics using hot carrier effects may pave the way for new device architectures with improved flexibility, frequency response, and ultrafast time-dynamics. In this presentation, we will discuss our recent work building hot electron photodetectors for NIR detection using Si and metal oxides, improved response using nanoscale metal alloys, and time-resolved ultrafast detection via pump-probe techniques exploiting surface plasmon excitation. Further, we will show how the incorporation of index near zero (INZ) substrates can lead to nearly 100% absorption in thin metal films, providing a new platform for hot electron devices. We will conclude with an outlook and discuss future possibilities with these novel material systems.
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Jeremy N. Munday "Hot carrier devices using novel alloys and substrates", Proc. SPIE 11797, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX, 117970G (1 August 2021); https://doi.org/10.1117/12.2594386
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KEYWORDS
Metals
Ultrafast phenomena
Optoelectronics
Oxides
Photodetectors
Plasmonics
Silicon
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