Presentation
1 August 2021 Perspective of reconfigurability of devices by low-dimensional optical phase-change III-Chalcogenides
Author Affiliations +
Abstract
Realizing optically and/or electrically tunable plasmonic resonances in the visible to ultraviolet (UV) spectral region is particularly important for reconfigurable photonic device applications. Ultrathin layered group-III chalcogenides, such as GaS, GaSe, GaTe, Sb2S3, are particularly intriguing 2D materials that are revealing exotic phase-change properties with great promise for application in next generation reconfigurable electronics and optoelectronic devices. In this contribution, we present experimental and calculated results obtained on low-loss layered phase-change semiconducting materials of GaS, GaSe, GaTe, Sb2S3, which shows in addition to the conventional amorphous to crystalline phase transition (like the GST family), order-order (polytypes), metal-to-insulator transitions that can be triggered electrically, optically and via plasmonic coupling with alternative phase-change plasmonic metals.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maria Losurdo, Yael Gutierrez Vela, Fernando Moreno, Mircea Modreanu, Marin Gheorghe, Guy Garry, Olga Ishchenko, Jordi Soler, Tigers Jonuzi, Christoph Cobet, and Wolfram Pernice "Perspective of reconfigurability of devices by low-dimensional optical phase-change III-Chalcogenides", Proc. SPIE 11800, Low-Dimensional Materials and Devices 2021, 118000N (1 August 2021); https://doi.org/10.1117/12.2596554
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