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1 August 2021 Fingerprinting the electronic properties of indium selenide using electron energy-loss spectroscopy
Abel Brokkelkamp, Isabel Postmes, Sergiy Krylyuk, Jaco ter Hoeven, Laurien Roest, Juan Rojo, Albert Davydov, Sonia Conesa-Boj
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Proceedings Volume 11800, Low-Dimensional Materials and Devices 2021; 1180011 (2021) https://doi.org/10.1117/12.2594180
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
Indium Selenide (InSe) is a remarkable two-dimensional quantum material whose characteristic properties include a bandgap in the near infrared region that increases with fewer layers. InSe is known to crystallize in either the β-, γ- or the ε-phase. Of these three crystalline phases, only the β and γ exhibit a direct bandgap, which makes them suitable for optoelectronic applications. The β-phase is easily distinguished from the others by means of Transmission Electron Microscopy (TEM), whereas the γ- and ε-phases appear very similar. We determine the crystalline phase present in these InSe specimens by systematic investigation with High Resolution TEM. We further assess the local electronic properties using Electron Energy-Loss Spectroscopy (EELS) by mapping relevant features in the spectra. Finally, we deploy Machine Learning techniques for a model-independent subtraction of the Zero Loss Peak, making it possible to identify features in the ultra-low-loss region of the EELS spectra.
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Abel Brokkelkamp, Isabel Postmes, Sergiy Krylyuk, Jaco ter Hoeven, Laurien Roest, Juan Rojo, Albert Davydov, and Sonia Conesa-Boj "Fingerprinting the electronic properties of indium selenide using electron energy-loss spectroscopy", Proc. SPIE 11800, Low-Dimensional Materials and Devices 2021, 1180011 (1 August 2021); https://doi.org/10.1117/12.2594180
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KEYWORDS
Indium
Transmission electron microscopy
Crystals
Doping
Optoelectronics
Machine learning
Near infrared
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