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1 August 2021 Wafer-scale, well-aligned growth of ZnO nanowires via chemical bath deposition: Assessment of Zinc ions contribution and other limiting factors
Anisha Gokarna, Yu-Chen Huang, Junze Zhou, Komla D. Nomenyo, Rodica Elena Ionescu, Gilles Lérondel
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Proceedings Volume 11801, UV and Higher Energy Photonics: From Materials to Applications 2021; 118010C (2021) https://doi.org/10.1117/12.2594782
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
ZnO is a multifunctional nanomaterial having various applications. The real challenge is to produce large scale, well-aligned, reproducible ZnO nanowires (NWs) using low-cost techniques. The aim of this work is to show a simple approach for the uniform growth of NWs, on entire silicon wafers, using a low-temperature chemical method. A study of the substrate size dependent growth of NWs was conducted to understand the limitations in the growth. A time dependent growth study was performed on ZnO NWs grown on 3-inch wafers to track their morphological evolution. Simultaneous growth of ZnO NWs on two 4-inch wafers will be demonstrated.
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Anisha Gokarna, Yu-Chen Huang, Junze Zhou, Komla D. Nomenyo, Rodica Elena Ionescu, and Gilles Lérondel "Wafer-scale, well-aligned growth of ZnO nanowires via chemical bath deposition: Assessment of Zinc ions contribution and other limiting factors", Proc. SPIE 11801, UV and Higher Energy Photonics: From Materials to Applications 2021, 118010C (1 August 2021); https://doi.org/10.1117/12.2594782
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KEYWORDS
Zinc oxide
Ions
Nanowires
Semiconducting wafers
Zinc
Photovoltaics
Silicon
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