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1 August 2021 Density functional theory analysis of symmetry-filtering scandium nitride magnetoresistive junctions
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Abstract
Magnetic tunnel junctions (MTJs) show great promise for implementation in high-performance STT-MRAM and novel computing regimes such as magnetic logic and neuromorphic computing. However, a handful of material setbacks stand in the way of the adoption of leading MgO MTJs over other emerging technologies, such as Resistive-RAM junctions, in next-generation architectures. Here, we explore the properties of iron / scandium nitride (ScN) magnetoresistive junctions using density functional theory (DFT) and find ScN a promising barrier material given its novel electron symmetry filtering properties, high TMR, and low RA-product. Magnetoresistance ratios exceeding 1900% are enabled by Δ2’ symmetry filtering through the barrier, in addition to the traditional Δ1 symmetries observed in MgO MTJs. The electronic properties of the diffusive Fe/ScN interface are resolved, with predicted half-metallicity that could amplify MR in realistic low-power ScN devices.
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© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Suyogya Karki, Vivian Rogers, Sophia Chen, Priyamvada Jadaun, Daniel S. Marshall, and Jean Anne C. Incorvia "Density functional theory analysis of symmetry-filtering scandium nitride magnetoresistive junctions", Proc. SPIE 11805, Spintronics XIV, 118051T (1 August 2021); https://doi.org/10.1117/12.2594744
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