Density functional theory analysis of symmetry-filtering scandium nitride magnetoresistive junctions

Suyogya Karki; Vivian Rogers; Sophia Chen; Priyamvada Jadaun; Daniel S. Marshall; Jean Anne C. Incorvia

doi:10.1117/12.2594744

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1 August 2021 Density functional theory analysis of symmetry-filtering scandium nitride magnetoresistive junctions

Suyogya Karki, Vivian Rogers, Sophia Chen, Priyamvada Jadaun, Daniel S. Marshall, Jean Anne C. Incorvia

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Proceedings Volume 11805, Spintronics XIV; 118051T (2021) https://doi.org/10.1117/12.2594744
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States

Abstract

Magnetic tunnel junctions (MTJs) show great promise for implementation in high-performance STT-MRAM and novel computing regimes such as magnetic logic and neuromorphic computing. However, a handful of material setbacks stand in the way of the adoption of leading MgO MTJs over other emerging technologies, such as Resistive-RAM junctions, in next-generation architectures. Here, we explore the properties of iron / scandium nitride (ScN) magnetoresistive junctions using density functional theory (DFT) and find ScN a promising barrier material given its novel electron symmetry filtering properties, high TMR, and low RA-product. Magnetoresistance ratios exceeding 1900% are enabled by Δ2’ symmetry filtering through the barrier, in addition to the traditional Δ1 symmetries observed in MgO MTJs. The electronic properties of the diffusive Fe/ScN interface are resolved, with predicted half-metallicity that could amplify MR in realistic low-power ScN devices.

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Suyogya Karki, Vivian Rogers, Sophia Chen, Priyamvada Jadaun, Daniel S. Marshall, and Jean Anne C. Incorvia "Density functional theory analysis of symmetry-filtering scandium nitride magnetoresistive junctions", Proc. SPIE 11805, Spintronics XIV, 118051T (1 August 2021); https://doi.org/10.1117/12.2594744

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