30 January 1990 Dry Etching Of Niobium Oxyde Thin Films
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Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978048
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
The rate of etching of Nb oxydes in plasmas of CF4-O2 and CF4-H2 gas mixtures has been investigated. The etch curves of the oxydes thermally grown at different temperatures ( 673 K - 1023 K ) and times ( 10 - 45 min ) show similar behavior as these of pure Nb films, but with etch rates a factor of 2-3 higher. Fluorine radicals seem to be the main reactants in the etch chemistry. The etching is anisotropic and the end-point detection can be accurately made by "in situ" laser interferometry.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. C. Seabra, A. C. Seabra, P. Verdonck, P. Verdonck, W. L. Xavier, W. L. Xavier, V. Baranauskas, V. Baranauskas, } "Dry Etching Of Niobium Oxyde Thin Films", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978048; https://doi.org/10.1117/12.978048


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