Dry Process Pattern Transfer for X-Ray Mask Fabrication

Gary F. Doyle

doi:10.1117/12.978045

30 January 1990 Dry Process Pattern Transfer for X-Ray Mask Fabrication

Gary F. Doyle

Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978045
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

This paper will describe our current X-Ray mask development efforts at ALO that have produced half-micron "device level" masks. It will focus on the pattern transfer phase of the mask fabrication process. This combines the use of Electron Beam writing strategies, wet etching, and 02 - RIE with a tri-level resist (PBS / Cr / S1400-23). Although the mask has no buried topography, the resist stencil must exhibit etched structures with vertical sidewalls and no undercutting of the transfer layer mask. This is made difficult by the need for overetch periods (≈30%) that are necessitated by pattern generated microloading effects in submicron geometries. An additional constraint involves the Au plating base beneath the tri-level layer, whose thickness integrity must be maintained prior to electroplating. This processing is carried out on a five-micron thick, three inch diameter free-standing boron nitride membrane substrate. This paper will also discuss some studies using a tri-level structure where RIE will define the mid-level and resist stencil layer. This area of study is one of several critical aspects of X-Ray mask technology that must be successfully developed to achieve 0.25 micron mask design rules.

Citation Download Citation

Gary F. Doyle "Dry Process Pattern Transfer for X-Ray Mask Fabrication", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); https://doi.org/10.1117/12.978045

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KEYWORDS

Photomasks

Reactive ion etching

Etching

Gold

Plating

X-rays

Semiconducting wafers

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