In situ Wafer Monitoring For Plasma Etching

Dennis S. Grimard; Fred L. Terry, Jr.; Michael E. Elta

doi:10.1117/12.978063

30 January 1990 In situ Wafer Monitoring For Plasma Etching

Dennis S. Grimard, Fred L. Terry, Jr., Michael E. Elta

Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978063
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

The purpose of this paper is to report a technique, based on scalar diffraction, which can be applied to the problem of real-time in situ wafer monitoring for plasma etching. This paper briefly outlines the theory motivating the use of diffraction as the basis for the monitoring technique. In addition, a simplified model is presented which utilizes the theory to show the unique correlation between surface topography and the diffraction images. Experimental and theoretical results demonstrate the usefulness of this technique for applications in the manufacture of semiconductors. In particular, the critical dimensions and sidewall profiles of rectangular and trapezoidal structures are investigated. For the trapezoidal structures submicron resolution on the order of 0.16 μm is easily obtained at a distance of 100mm in under 200 ms. Sidewall profiles ranging from 12.5° to 90° are also compared and shown to be clearly discernable using this technique.

Citation Download Citation

Dennis S. Grimard, Fred L. Terry, Jr., and Michael E. Elta "In situ Wafer Monitoring For Plasma Etching", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); https://doi.org/10.1117/12.978063

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