30 January 1990 Magnetron-Enhanced Etching Of Photoresist For Sub-Micron Patterning
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Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978046
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Design rules for the next generation of VLSI and ULSI devices will routinely require the plasma etching of sub-micron geometries. These requirements will create even greater challenges for the exposure and devolopment of photoresist on reflective and severe topographies. Two processes developed to meet these challenges are Multi-Level Resist processing and the Dry Development of Photoresist. Critical to both of these processes is the need for a productive, >4000A/min, anisotropic etch of photoresist with critical dimension loss of <0.05um.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Selino, A. Selino, M. Siegel, M. Siegel, R. Lombaerts, R. Lombaerts, } "Magnetron-Enhanced Etching Of Photoresist For Sub-Micron Patterning", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978046; https://doi.org/10.1117/12.978046
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