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30 January 1990 Plasma Assisted Deposition and Device Technology: Interlevel Dielectric Considerations
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Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978050
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
In this paper we discuss several approaches for obtaining satisfactory coverage of plasma enhanced CVD TEOS, PETEOS, over severe topography in submicron and larger CMOS technologies. The problems inherent to PETEOS deposition are presented and several solutions are discussed. Adequate film contours can be obtained by the formation of a simple spacer plus a thick film etchback step. Other approaches discussed include a single deposition and etchback, multiple spacer formation, sloped metal profiles, planarization, and profile modification with physical sputtering.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. W. Hills, A. S. Harrus, and M. J. Thoma "Plasma Assisted Deposition and Device Technology: Interlevel Dielectric Considerations", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); https://doi.org/10.1117/12.978050
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